Room temperature electrically tunable broadband terahertz Faraday effect
arXiv:1211.5569 · doi:10.1063/1.4811496
Abstract
The terahertz (THz) frequency range (0.1-10 THz) fills the gap between the microwave and optical parts of the electromagnetic spectrum. Recent progress in the generation and detection of the THz radiation has made it a powerful tool for fundamental research and resulted in a number of applications. However, some important components necessary to effectively manipulate THz radiation are still missing. In particular, active polarization and phase control over a broad THz band would have major applications in science and technology. It would, e.g., enable high-speed modulation for wireless communications and real-time chiral structure spectroscopy of proteins and DNA. In physics, this technology can be also used to precisely measure very weak Faraday and Kerr effects, as required, for instance, to probe the electrodynamics of topological insulators. Phase control of THz radiation has been demonstrated using various approaches. They depend either on the physical dimensions of the phase plate (and hence provide a fixed phase shift) or on a mechanically controlled time delay between optical pulses (and hence prevent fast modulation). Here, we present data that demonstrate the room temperature giant Faraday effect in HgTe can be electrically tuned over a wide frequency range (0.1-1 THz). The principle of operation is based on the field effect in a thin HgTe semimetal film. These findings together with the low scattering rate in HgTe open a new approach for high-speed amplitude and phase modulation in the THz frequency range.
References in corpus (5)
- Topological Field Theory of Time-Reversal Invariant Insulators
- Giant Tunable Faraday Effect in a Semiconductor Magneto-plasma for Broadband Terahertz Polarization Optics
- Terahertz Conductivity at the Verwey Transition in Magnetite
- Terahertz Quantum Hall Effect in a Topological Insulator
- Metamaterials proposed as perfect magnetoelectrics
Cited by in corpus (16)
- Observation of the universal magnetoelectric effect in a 3D topological insulator
- Cyclotron Resonance Assisted Photocurrents in Surface States of a 3D Topological Insulator Based on a Strained High Mobility HgTe Film
- Probing quantum capacitance in a 3D topological insulator
- Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states
- Universal Faraday rotation in HgTe wells with critical thickness
- Quantum Oscillations of Photocurrents in HgTe Quantum Wells with Dirac and Parabolic Dispersions
- Topological insulators based on HgTe
- Band structure of a HgTe-based three-dimensional topological insulator
- Topological surface states in thick partially relaxed HgTe film
- Band Structure of Two-dimensional Dirac Semimetal from Cyclotron Resonance
- Terahertz properties of Dirac fermions in HgTe films with optical doping
- Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe
- Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of CdHgTe
- New polarization rotation and exact TEM wave solutions in topological insulators
- Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films
- Weak antilocalization in partially relaxed 200-nm HgTe films