Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films
arXiv:1902.02972 · doi:10.1103/PhysRevMaterials.3.054205
Abstract
We report on the study of magneto-photogalvanic and magnetotransport phenomena in 200 nm partially strained HgTe films. This thickness is slightly larger than the estimated critical thickness of lattice relaxation leaving the film partially relaxed with the value of the energy gap close to zero. We show that illumination of HgTe films with monochromatic terahertz laser radiation results in a giant resonant photocurrent caused by the cyclotron resonance in the surface states. The resonant photocurrent is also detected in the reference fully strained 80 nm HgTe films previously shown to be fully gapped 3D topological insulators. We show that the resonance positions in both types of films almost coincide demonstrating the existence of topologically protected surface states in thick HgTe films. The conclusion is supported by magnetotransport experiments.
arXiv comment11 pages, 8 figures
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Cited by in corpus (4)
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- Band structure of a HgTe-based three-dimensional topological insulator
- Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
- Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of CdHgTe