Probing quantum capacitance in a 3D topological insulator
arXiv:1511.00606 · doi:10.1103/PhysRevLett.116.166802
Abstract
We measure the quantum capacitance and probe thus directly the electronic density of states of the high mobility, Dirac type of two-dimensional electron system, which forms on the surface of strained HgTe. Here we show that observed magneto-capacitance oscillations probe, in contrast to magnetotransport, primarily the top surface. Capacitance measurements constitute thus a powerful tool to probe only one topological surface and to reconstruct its Landau level spectrum for different positions of the Fermi energy.
5 pages of the main text with 3 figures + 10 appendix pages with 7 figures
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- Topological insulators and superconductors
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- Topological Insulator Materials
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- Non-sinusoidal current-phase relationship in Josephson junctions from the 3D topological insulator HgTe
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- Room temperature electrically tunable broadband terahertz Faraday effect
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Cited by in corpus (30)
- Probing Spin Helical Surface States in Topological HgTe Nanowires
- Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility
- Ballistic geometric resistance resonances in a single surface of a topological insulator
- Topological insulators based on HgTe
- Dynamical separation of bulk and edge transport in HgTe-based 2D topological insulators
- Quantum Hall effect and Landau levels in the 3D topological insulator HgTe
- Topological states in superlattices of HgTe-class materials for engineering three-dimensional flat bands
- Band structure of a HgTe-based three-dimensional topological insulator
- Landau Levels of Topologically-Protected Surface States Probed by Dual-Gated Quantum Capacitance
- Gate-induced decoupling of surface and bulk state properties in selectively-deposited BiTe nanoribbons
- Simple mechanisms that impede the Berry phase identification from magneto-oscillations
- Topological surface states in thick partially relaxed HgTe film
- Band Structure of Two-dimensional Dirac Semimetal from Cyclotron Resonance
- 2D-Dirac surface states and bulk gap probed via quantum capacitance in a 3D topological insulator
- Energy spectrum of semimetallic HgTe quantum wells
- Superradiant and transport lifetimes of the cyclotron resonance in the topological insulator HgTe
- Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
- Terahertz Magnetospectroscopy of Cyclotron Resonances from Topological Surface States in Thick Films of CdHgTe
- Hybridization of topological surface states with a flat band
- Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy
- Quantum capacitance of an HgTe quantum well as an indicator of the topological phase
- Cyclotron resonance induced photogalvanic effect in surface states of 200 nm thick strained HgTe films
- Transport properties of a 1000-nm HgTe film: the interplay of surface and bulk carriers
- Transformation of an energy spectrum and wave functions in the crossover from two- to three-dimensional topological insulator in HgTe quantum wells: long and thorny way
- Anomalous Decay of Quantum Resistance Oscillations of Two Dimensional Helical Electrons in Magnetic Field
- Spin splitting of surface states in HgTe quantum wells
- Thermoelectric transport in a three-dimensional HgTe topological insulator
- Weak antilocalization in partially relaxed 200-nm HgTe films
- Anomalous conductance steps in three-dimensional topological insulator HgTe-based quantum point contacts
- Self-Consistent Model for Gate Control of Narrow-, Broken-, and Inverted-Gap (Topological) Heterostructures