Self-consistent $\text{k}\cdot \text{p}$ calculations for gated thin layers of 3D Topological Insulators

Abstract

Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screening effects, physical properties that arise from the bottom surface are gate-voltage independent. Finally, we point out the experimental signatures that characterize these effects.

8 pages, 9 figures

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• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
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Cited by in corpus (1)

• Stability and accuracy control of $\mathbf{k}\cdot \mathbf{p}$ parameters