Self-consistent $\text{k}\cdot \text{p}$ calculations for gated thin layers of 3D Topological Insulators

Abstract

Topological protected surface states are one of the hallmarks of three-dimensional topological insulators. In this work we theoretically analyze the gate-voltage-effects on a quasi-3D layer of HgTe. We find that while the gapless surface states dominate the transport, as an external gate voltage is applied, the existence of bulk charge carriers is likely to occur. We also find that due to screening effects, physical properties that arise from the bottom surface are gate-voltage independent. Finally, we point out the experimental signatures that characterize these effects.

arXiv comment8 pages, 9 figures

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Cited by in corpus (7)

• Observation of the universal magnetoelectric effect in a 3D topological insulator
• Probing quantum capacitance in a 3D topological insulator
• Observation of Volkov-Pankratov states in topological HgTe heterojunctions using high-frequency compressibility
• Survival of the quantum anomalous Hall effect in orbital magnetic fields as a consequence of the parity anomaly
• Universality and stability of the edge states of chiral-symmetric topological semimetals and surface states of the Luttinger semimetal
• Stability and accuracy control of $\mathbf{k}\cdot \mathbf{p}$ parameters
• Intrinsic emergence of Majorana modes in Luttinger j=3/2 systems