Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
arXiv:2008.04695 · doi:10.1063/5.0025745
Abstract
We report on a detailed study of the terahertz (THz) photoresistivity in a strained HgTe three-dimensional topological insulator (3D TI) for all Fermi level positions: inside the conduction and valence bands, and in the bulk gap. In the presence of a magnetic field we detect a resonance corresponding to the cyclotron resonance (CR) in the top surface Dirac fermions (DF) and examine the nontrivial dependence of the surface state cyclotron mass on the Fermi level position. We also detect additional resonant features at moderate electron densities and demonstrate that they are caused by the mixing of surface DF and bulk electrons. At high electron densities, we observe THz radiation induced 1/B-periodic low-field magneto-oscillations coupled to harmonics of the CR and demonstrate that they have a common origin with microwave-induced resistance oscillations (MIRO) previously observed in high mobility GaAs-based heterostructures. This observation attests the superior quality of 2D electron system formed by helical surface states in strained HgTe films.
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Cited by in corpus (3)
- Demonstration of high sensitivity of microwave-induced resistance oscillations to circular polarization
- Observation of High Harmonics of the Cyclotron Resonance in Microwave Transmission of a High-Mobility Two-Dimensional Electron System
- Oscillatory photoresistance on the high field side of the cyclotron resonance