Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states

Abstract

We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The influence of the HgTe layer thickness on the conversion efficiency has been studied, as well as the role of a HgCdTe barrier inserted in-between the HgTe and NiFe layers. These measurements, associated to the temperature dependence of the resistivity, allows to ascribe these high conversion rates to the spin momentum locking property of HgTe surface states.

References in corpus (11)

• Topological Insulators with Inversion Symmetry
• Emergent Phenomena Induced by Spin-Orbit Coupling at Surfaces and Interfaces
• Highly efficient and tuneable spin-to-charge conversion through Rashba coupling at oxide interfaces
• Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques
• Single valley Dirac fermions in zero-gap HgTe quantum wells
• Surface state dominated spin-charge current conversion in topological insulator/ferromagnetic insulator heterostructures
• Pressure and temperature driven phase transitions in HgTe quantum wells
• Fermi-Level Pinning, Charge Transfer, and Relaxation of Spin-Momentum Locking at Metal Contacts to Topological Insulators
• Temperature-driven transition from a semiconductor to a topological insulator
• Effect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films
• Revealing topological Dirac fermions at the surface of strained HgTe thin films via Quantum Hall transport spectroscopy

Cited by in corpus (12)

• Spin-Orbit Torque and Nernst Effect in Bi-Sb/Co Heterostructures
• Observation of Large Unidirectional Rashba Magnetoresistance in Ge(111)
• Spin-charge interconversion in KTaO${}_3$ two-dimensional electron gases
• Large spin-to-charge conversion at room temperature in extended epitaxial Sb2Te3 topological insulator chemically grown on Silicon
• Efficient intrinsic spin-to-charge current conversion in an all-epitaxial single-crystal perovskite-oxide heterostructure of La0.67Sr0.33MnO3/LaAlO3/SrTiO3
• Spin-orbit readout using thin films of topological insulator Sb2Te3 deposited by industrial magnetron sputtering
• Bilinear magnetoresistance in HgTe topological insulator: opposite signs at opposite interfaces demonstrated by gate control
• Terahertz photoresistivity of a high-mobility 3D topological insulator based on a strained HgTe film
• Negligible thermal contributions to the spin pumping signal in ferromagnetic metal-Platinum bilayers
• Hybridization of topological surface states with a flat band
• Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
• Theoretical analysis of the inverse Edelstein effect at the LaAlO${}_3$ / SrTiO${}_3$ interface with an effective tight-binding model: Important role of the second $d_{xy}$ subband