activity
20152023
most citedHighly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states

38 citations · 160 across the 9 of their papers we have counts for

collaborators

10 papers

cond-mat.mes-hall2023★ 35 cited

Atomic resolution mapping of localized phonon modes at grain boundaries

Benedikt Haas, Tara M. Boland, Christian Elsässer +5

Phonon scattering at grain boundaries (GBs) is significant in controlling nanoscale device thermal conductivity. However, GBs could also act as waveguides for selected modes. To me…

physics.comp-ph2022★ 1 cited

Lossy Compression of Electron Diffraction Patterns for Ptychography via Change of Basis

Anton Gladyshev, Thomas C. Pekin, Marcel Schloz +3

Ptychography is a computational imaging technique that has risen in popularity in the x-ray and electron microscopy communities in the past half decade. One of the reasons for this…

physics.ins-det2021★ 2 cited

Increasing Spatial Fidelity and SNR of 4D-STEM using Multi-frame Data Fusion

Colum M. O'Leary, Benedikt Haas, Christoph T. Koch +2

4D-STEM, in which the 2D diffraction plane is captured for each 2D scan position in the scanning transmission electron microscope (STEM) using a pixelated detector, is complementin…

cond-mat.mtrl-sci2020

Two-dimensional GaO glass: a large scale passivation and protection material for monolayer WS

Matthias Wurdack, Tinghe Yun, Eliezer Estrecho +14

Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration…

cond-mat.mtrl-sci2019★ 20 cited

Microstructure and Elastic Constants of Transition Metal Dichalcogenide Monolayers from Friction and Shear Force Microscopy

Xiaomin Xu, Thorsten Schultz, Ziyu Qin +10

Optical and electrical properties of two-dimensional transition metal dichalcogenides (TMDCs) grown by chemical vapor deposition (CVD) are strongly determined by their microstructu…

cond-mat.mtrl-sci2019

Ordered structure of FeGe formed during solid-phase epitaxy

B Jenichen, M Hanke, S Gaucher +7

FeSi/Ge(Fe,Si)/FeSi thin film stacks were grown by a combination of molecular beam epitaxy and solid phase epitaxy (Ge on FeSi). The stacks were analyzed using el…