Universal scaling for the spin-electricity conversion on surface states of topological insulators
arXiv:1604.00751 · doi:10.1103/PhysRevB.94.024404
Abstract
We have investigated spin-electricity conversion on surface states of bulk-insulating topological insulator (TI) materials using a spin pumping technique. The sample structure is Ni-Fe|Cu|TI trilayers, in which magnetic proximity effects on the TI surfaces are negligibly small owing to the inserted Cu layer. Voltage signals produced by the spin-electricity conversion are clearly observed, and enhanced with decreasing temperature in line with the dominated surface transport at lower temperatures. The efficiency of the spin-electricity conversion is greater for TI samples with higher resistivity of bulk states and longer mean free path of surface states, consistent with the surface spin-electricity conversion.
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- Highly efficient spin-to-charge current conversion at room temperature in strained HgTe surface states
- Efficient Edelstein effects in one-atom-layer Tl-Pb compound