Observation of Dirac Holes and Electrons in a Topological Insulator

Abstract

We show that in the new topological-insulator compound Bi_{1.5}Sb_{0.5}Te_{1.7}Se_{1.3} one can achieve a surfaced-dominated transport where the surface channel contributes up to 70% of the total conductance. Furthermore, it was found that in this material the transport properties sharply reflect the time dependence of the surface chemical potential, presenting a sign change in the Hall coefficient with time. We demonstrate that such an evolution makes us observe both Dirac holes and electrons on the surface, which allows us to reconstruct the surface band dispersion across the Dirac point.

4 pages, 4 figures, accepted for publication in PRL

References in corpus (4)

• Topological Insulators with Inversion Symmetry
• Topological origin of subgap conductance in insulating bilayer graphene
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements

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