Signature of the topological surface state in the thermoelectric properties of Bi${}_2$Te${}_3$

Abstract

We present ab initio electronic structure calculations based on density functional theory for the thermoelectric properties of Bi${}_2$Te${}_3$ films. Conductivity and thermopower are computed in the diffusive limit of transport based on the Boltzmann equation. Bulk and surface contribution to the transport coefficients are separated by a special projection technique. As a result we show clear signatures of the topological surface state in the thermoelectric properties.

6 pages, 4 figures

References in corpus (3)

• Topological Surface States Protected From Backscattering by Chiral Spin Texture
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Thermoelectric transport in ${\text{Bi}}_2{\text{Te}}_3/{\text{Sb}}_2{\text{Te}}_3$ superlattices

Cited by in corpus (8)

• Impact of the Topological Surface State on the Thermoelectric Transport in Sb${}_2$Te${}_3$ Thin Films
• Thermoelectric performance of classical topological insulator nanowires
• Nanoscale Surface Dynamics of Bi${}_2$Te${}_3$(111): Observation of a Prominent Surface Acoustic Wave and the Role of van der Waals Interactions
• Thermoelectric Effects and Topological Insulators
• Anomalous Nernst effect on a magnetically-doped topological insulator surface: A Green's function approach
• High-field charge transport on the surface of Bi${}_2$Se${}_3$
• Control of intervalley scattering in Bi${}_2$Te${}_3$ via temperature-dependent band renormalization
• Large Enhancement of Electronic Thermal Conductivity and Lorenz Number in Topological Insulator Bi2Te2Se Thin Films