Shubnikov-de Haas oscillations from topological surface states of metallic BiSeTe
arXiv:1412.3836 · doi:10.1103/PhysRevB.90.241111
Abstract
We have studied the quantum oscillations in the conductivity of metallic, p-type BiSeTe. The dependence of the oscillations on the angle of the magnetic field with the surface as well as the Berry phase determined from the Landau level fan plot indicate that the observed oscillations arise from surface carriers with the characteristic Dirac dispersion. Several quantities characterizing the surface conduction are calculated employing the Lifshitz-Kosevich theory. The low value of the Fermi energy with respect to the Dirac point is consistent with the metallic character of the bulk hole carriers. We conclude that, due to the peculiar shape of the valence band, the Shubnikov-de Haas oscillations of the bulk carriers are shifted to higher magnetic fields which allows for the detection of the quantum oscillations from the topological surface states at lower field.
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- Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in BiSe with high charge-carrier density
- Shubnikov-de Haas oscillations in p and n-type topological insulator (BiSb)Te
- Simple mechanisms that impede the Berry phase identification from magneto-oscillations
- Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic Bi2Se2.1Te0.9
- Bulk contribution to magnetotransport properties of low defect-density BiTe topological insulator thin films
- Large magnetoresistance and Fermi surface study of SbSeTe single crystal
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- Topological delocalization and tuning of surface channel separation in Bi2Se2Te Topological Insulator Thin films
- Effect of pressure on the transport properties and thermoelectric performance of Dirac semimetal ZrTe5
- Tuning Chemical Potential in the Dirac Cone by Compositional Engineering