Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Abstract

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance.

7 pages, 4 figures

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Cited by in corpus (2)

• Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
• Shubnikov-de Haas oscillations from topological surface states of metallic Bi${}_2$Se${}_{2.1}$Te${}_{0.9}$