Structural and electronic properties of highly doped topological insulator Bi2Se3 crystals

Abstract

We present a study of the structural and electronic properties of highly doped topological insulator Bi2Se3 single crystals synthesized by the Bridgman method. Lattice structural characterizations by X-ray diffraction, scanning tunneling microscopy, and Raman spectroscopy confirmed the high quality of the as-grown single crystals. The topological surface states in the electronic band structure were directly re- vealed by angle-resolved photoemission spectroscopy. Transport measurements showed that the conduction was dominated by the bulk carriers and confirmed a previously observed bulk quantum Hall effect in such highly doped Bi2Se3 samples. We briefly discuss several possible strategies of reducing bulk conductance.

7 pages, 4 figures

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• Topological Insulators
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• Three-Dimensional Topological Insulators
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• Quantum Oscillations in a Topological Insulator Bi${}_2$Te${}_2$Se with Large Bulk Resistivity (6 $\Omega$cm)
• Thermal Expansion Coefficients of Bi${}_2$Se${}_3$ and Sb${}_2$Te${}_3$ Crystals from 10 K to 270 K

Cited by in corpus (16)

• Observation of topological surface state quantum Hall effect in an intrinsic three-dimensional topological insulator
• Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se
• 2D layered transport properties from topological insulator Bi${}_2$Se${}_3$ single crystals and micro flakes
• Topological insulator based spin valve devices: evidence for spin polarized transport of spin-momentum-locked topological surface states
• Shubnikov-de Haas oscillations from topological surface states of metallic Bi${}_2$Se${}_{2.1}$Te${}_{0.9}$
• Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3
• Revealing Optical Transitions and Carrier Recombination Dynamics within the Bulk Band Structure of Bi2Se3
• Optimization of the growth of the van der Waals materials Bi2Se3 and (Bi0.5In0.5)2Se3 by molecular beam epitaxy
• Quantum oscillations in metallic Sb2Te2Se topological insulator
• Weak antilocalization effect due to topological surface states in Bi${}_2$Se${}_{2.1}$Te${}_{0.9}$
• Importance of van der Waals interactions for ab initio studies of topological insulators
• Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic Bi2Se2.1Te0.9
• Large magnetoresistance and Fermi surface study of Sb${}_2$Se${}_2$Te single crystal
• Carrier doping of Bi${}_2$Se${}_3$ surface by chemical adsorption -- a DFT study
• Magnetic properties of Mn-doped Bi${}_2$Se${}_3$ topological insulators: ab initio calculations
• Influence of Helical Spin Structure on the Magnetoresistance of an Ideal Topological Insulator