Quantum oscillations in metallic Sb2Te2Se topological insulator

Abstract

We have studied the magnetotransport properties of the metallic, p-type Sb2Te2Se which is a topological insulator. Magnetoresistance shows Shubnikov de Haas oscillations in fields above B=15 T. The maxima/minima positions of oscillations measured at different tilt angles with respect to the B direction align with the normal component of field Bcosine, implying the existence of a 2D Fermi surface in Sb2Te2Se. The value of the Berry phase determined from a Landau level fan diagram is very close to 0.5, further suggesting that the oscillations result from topological surface states. From Lifshitz-Kosevich analyses, the position of the Fermi level is found to be EF =250 meV, above the Dirac point. This value of EF is almost 3 times as large as that in our previous study on the Bi2Se2:1Te0:9 topological insulator; however, it still touches the tip of the bulk valence band. This explains the metallic behavior and hole-like bulk charge carriers in the Sb2Te2Se compound.

arXiv commentAccepted for publication in Phys. Rev. B

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• Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator
• Weak antilocalization effect due to topological surface states in Bi${}_2$Se${}_{2.1}$Te${}_{0.9}$
• Simultaneous detection of quantum oscillations from bulk and topological surface states in metallic Bi2Se2.1Te0.9
• Large magnetoresistance and Fermi surface study of Sb${}_2$Se${}_2$Te single crystal
• Bulk Rashba spin splitting and Dirac surface state in $p$-type (Bi${}_{0.9}$Sb${}_{0.1}{)}_2$Se${}_3$ single crystal
• Controlling helicity-dependent photocurrent in polycrystalline Sb${}_2$Te${}_2$Se topological insulator thin films at ambient temperature through wave-vector of and photothermal gradient due to polarized light