Surface Shubnikov-de Hass oscillations and non-zero Berry phases of the topological hole conduction in Tl${}_{1-x}$Bi${}_{1+x}$Se${}_2$

Abstract

We report the observation of two-dimensional Shubnikov-de Hass (SdH) oscillations in the topological insulator Tl${}_{1-x}$Bi${}_{1+x}$Se${}_2$. Hall effect measurements exhibited electron-hole inversion in samples with bulk insulating properties. The SdH oscillations accompanying the hole conduction yielded a large surface carrier density of $n_{\mathrm{s}}=5.1\times 10^{12}$/cm${}^2$, with the Landau-level fan diagram exhibiting the $\pi$ Berry phase. These results showed the electron-hole reversibility around the in-gap Dirac point and the hole conduction on the surface Dirac cone without involving the bulk metallic conduction.

5 pages, 4 figures

References in corpus (5)

• Topological origin of subgap conductance in insulating bilayer graphene
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• Observation of Dirac Holes and Electrons in a Topological Insulator
• Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2
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• Pressure-induced Superconductivity in Zintl Topological Insulator SrIn2As2
• Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission