Direct Evidence for the Dirac-Cone Topological Surface States in Ternary Chalcogenide TlBiSe2
arXiv:1006.2437 · doi:10.1103/PhysRevLett.105.136802
Abstract
We have performed high-resolution angle-resolved photoemission spectroscopy on TlBiSe2, which is a member of the ternary chalcogenides theoretically proposed as candidates for a new class of three-dimensional topological insulators. By measuring the energy band dispersions over the entire surface Brillouin zone, we found a direct evidence for a non-trivial surface metallic state showing a X-shaped energy dispersion within the bulk band gap. The present result unambiguously establishes that TlBiSe2 is a strong topological insulator with a single Dirac cone at the Brillouin-zone center. The observed bulk band gap of 0.4 eV is the largest among known topological insulators, making TlBiSe2 the most promising material for studying room-temperature topological phenomena.
4 pages, 4 figures
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- Three-Dimensional Topological Insulators in I-III-VI and II-IV-V Chalcopyrite Semiconductors
- Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3
- Effect of finite temperature and uniaxial anisotropy on the Casimir effect with three-dimensional topological insulators
- Excitons and Optical Absorption on the Surface of a Strong Topological Insulator with a Magnetic Energy Gap