Topological electronic structure and Weyl semimetal in the TlBiSe class of semiconductors
arXiv:1209.5896 · doi:10.1103/PhysRevB.86.115208
Abstract
We present an analysis of bulk and surface electronic structures of thallium based ternary III-V-VI series of compounds TlMQ, where M=Bi or Sb and Q=S, Se or Te, using the ab initio density functional theory framework. Based on parity analysis and (111) surface electronic structure, we predict TlSbSe, TlSbTe, TlBiSe and TlBiTe to be non-trivial topological insulators with a single Dirac cone at the -point, and TlSbS and TlBiS to be trivial band insulators. Our predicted topological phases agree well with available angle-resolved photoemission spectroscopy (ARPES) measurements, in particular the topological phase changes between TlBiSe and TlBiS. Moreover, we propose that Weyl semimetal can be realized at the topological critical point in TlBi(SSe) and TlBi(STe) alloys by breaking the inversion symmetry in the layer by layer growth in the order of Tl-Se(Te)-Bi-S, yielding six Dirac cones centered along the directions in the bulk band structure.
arXiv comment9 pages, 10 figures,Accepted for publication in Physical Review B (2012)
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