Topological insulator in a Bi-BiSe infinitely adaptive superlattice phase
arXiv:1208.2741 · doi:10.1103/PhysRevB.86.241101
Abstract
We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and BiSe. The compound, based on BiSe, is a 1:1 natural superlattice of alternating Bi layers and BiSe layers; the inclusion of S allows the growth of large crystals, with the formula BiSeS. The crystals cleave along the interfaces between the Bi and BiSe layers, with the surfaces obtained having alternating Bi or Se termination. The resulting terraces, observed by photoemission electron microscopy, create avenues suitable for the study of one-dimensional topological physics. The electronic structure, determined by spin- and angle- resolved photoemission spectroscopy, shows the existence of a surface state that forms a large, hexagonally shaped Fermi surface around the point of the surface Brillouin zone, with the spin structure indicating that this material is a topological insulator.
published version, 5 pages, 4 figures
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