Reactive chemical doping of the $B{i}_{2}S{e}_3$ topological insulator

Abstract

Using angle resolved photoemission spectroscopy we studied the evolution of the surface electronic structure of the topological insulator ${\text{Bi}}_2{\text{Se}}_3$ as a function of water vapor exposure. We find that a surface reaction with water induces a band bending shifting the Dirac point deep into the occupied states and creating quantum well states with a strong Rashba-type splitting. The surface is thus not chemically inert, but the topological state remains protected. The band bending is traced back to Se-abstraction leaving positively charged vacancies at the surface. Due to the presence of water vapor, a similar effect takes place when ${\text{Bi}}_2{\text{Se}}_3$ crystals are left in vacuum or cleaved in air, which likely explains the aging effect observed in the ${\text{Bi}}_2{\text{Se}}_3$ band structure.

4 pages, 4 figures

References in corpus (10)

• Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Electrically detected interferometry of Majorana fermions in a topological insulator
• A topological insulator surface under strong Coulomb, magnetic and disorder perturbations
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Large tuneable Rashba spin splitting of a two-dimensional electron gas in Bi2Se3
• Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
• Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
• How Do You Want That Insulator?

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