Direct observation of band bending in topological insulator Bi2Se3

Abstract

The surface band bending tunes considerably the surface band structures and transport properties in topological insulators. We present a direct measurement of the band bending on the Bi2Se3 by using the bulk sensitive angular-resolved hard x-ray photospectroscopy (HAXPES). We tracked the depth dependence of the energy shift of Bi and Se core states. We estimate that the band bending extends up to about 20 nm into the bulk with an amplitude of 0.23--0.26 eV, consistent with profiles previously deduced from the binding energies of surface states in this material.

References in corpus (7)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
• Emergent quantum confinement at topological insulator surfaces
• Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
• Nonlinear optical probe of tunable surface electrons on a topological insulator

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• Spatial Control of Charge Doping in n-Type Topological Insulators
• Boosting Transparency in Topological Josephson Junctions via Stencil Lithography
• Non-contact mutual inductance based measurement of an inhomogeneous topological insulating state in Bi2Se3 single crystals with defects
• Parasitic conduction channels in topological insulator thin films
• Intrinsic surface dipole in topological insulators
• Field induced charge symmetry in topological insulator Bi${}_2$Te${}_3$ revealed by nuclear magnetic resonance
• Band bending profile and band offset extraction at semiconductor-metal interfaces
• Effect of extended confinement on the structure of edge channels in the quantum anomalous Hall effect