Spatial Control of Charge Doping in n-Type Topological Insulators
arXiv:2503.20334 · doi:10.1021/acs.nanolett.1c01100
Abstract
Spatially controlling the Fermi level of topological insulators and keeping its electronic states stable are indispensable processes to put this material into practical use for semiconductor spintronics devices. So far, however, such a method has not been established yet. Here we show a novel method for doping hole into n-type topological insulators BiX (X= Se, Te) that overcomes the shortcomings of the previous reported methods. The key of this doping is to adsorb HO on BiX decorated with a small amount of carbon, and its trigger is the irradiation of photon with sufficient energy to excite core-electrons of the outermost layer atoms. This method allows controlling the doping amount by the irradiation time, and acts as photolithography. Such a tunable doping makes it possible to design the electronic states at the nanometer scale, and thus paves a promising avenue toward the realization of novel spintronics devices based on topological insulators.
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