Photoemission induced gating of topological insulator

Abstract

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu intercalated Bi2Se3 shows that the surface states occupancy in this material can be tuned by changing the photon energy and understood as a photoemission induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests the intercalation as a recipe for synthesis of the material suitable for electronic applications.

+ resistivity data and some discussion

References in corpus (3)

• Non-Abelian Anyons and Topological Quantum Computation
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3

Cited by in corpus (7)

• ARPES experiment in fermiology of quasi-2D metals (Review Article)
• Anisotropic effect of warping on the lifetime broadening of topological surface states in angle-resolved photoemission from Bi${}_2$Te${}_3$
• Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
• Trigger of the ubiquitous surface band bending in 3D topological insulators
• Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi
• Spatial Control of Charge Doping in n-Type Topological Insulators
• On the Formation of GW190521-like Binary Black Hole Merger Systems