Photoemission induced gating of topological insulator

Abstract

The recently discovered topological insulators exhibit topologically protected metallic surface states which are interesting from the fundamental point of view and could be useful for various applications if an appropriate electronic gating can be realized. Our photoemission study of Cu intercalated Bi2Se3 shows that the surface states occupancy in this material can be tuned by changing the photon energy and understood as a photoemission induced gating effect. Our finding provides an effective tool to investigate the new physics coming from the topological surface states and suggests the intercalation as a recipe for synthesis of the material suitable for electronic applications.

arXiv comment+ resistivity data and some discussion

References in corpus (9)

• Spintronics: Fundamentals and applications
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• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
• Superconductivity in CuxBi2Se3 and its implications for pairing in the undoped topological insulator
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Superconductivity without magnetism in LiFeAs

Cited by in corpus (17)

• Experimental Realization of a Three-Dimensional Dirac Semimetal
• Tolerance of topological surface states towards magnetic moments: Fe on Bi2Te3 and Bi2Se3
• Graphene-based topological insulator with an intrinsic bulk band gap above room temperature
• Helical fluctuations in the Raman response of the topological insulator Bi2Se3
• ARPES experiment in fermiology of quasi-2D metals (Review Article)
• Anisotropic effect of warping on the lifetime broadening of topological surface states in angle-resolved photoemission from Bi${}_2$Te${}_3$
• Persistent Optical Gating of a Topological Insulator
• Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
• Trigger of the ubiquitous surface band bending in 3D topological insulators
• Comparative study of rare earth hexaborides using high resolution angle-resolved photoemission
• Possible Experimental Realization of a Basic Z2 Topological Semimetal
• Reversible tuning of the surface state in a psuedo-binary Bi2(Te-Se)3 topological insulator
• Behavior of gapped and ungapped Dirac cones in an antiferromagnetic topological metal, SmBi
• Spatial Control of Charge Doping in n-Type Topological Insulators
• Anomalously enhanced photoemission from the Dirac point and symmetry of the self-energy variations for the surface states in Bi2Se3
• Micro-metric electronic patterning of a topological band structure using a photon beam
• On the Formation of GW190521-like Binary Black Hole Merger Systems