Dirac states with knobs on: interplay of external parameters and the surface electronic properties of 3D topological insulators
arXiv:1504.04523 · doi:10.1103/PhysRevB.91.205134
Abstract
Topological insulators are a novel materials platform with high applications potential in fields ranging from spintronics to quantum computation. In the ongoing scientific effort to demonstrate controlled manipulation of their electronic structure by external means, stoichiometric variation and surface decoration are two effective approaches that have been followed. In ARPES experiments, both approaches are seen to lead to electronic band structure changes. Such approaches result in variations of the energy position of bulk and surface-related features and the creation of two-dimensional electron gases.The data presented here demonstrate that a third manipulation handle is accessible by utilizing the amount of illumination a topological insulator surface has been exposed to under typical experimental ARPES conditions. Our results show that this new, third, knob acts on an equal footing with stoichiometry and surface decoration as a modifier of the electronic band structure, and that it is in continuous competition with the latter. The data clearly point towards surface photovoltage and photo-induced desorption as the physical phenomena behind modifications of the electronic band structure under exposure to high-flux photons. We show that the interplay of these phenomena can minimize and even eliminate the adsorbate-related surface band bending on typical binary, ternary and quaternary Bi-based topological insulators. Including the influence of the sample temperature, these data set up a framework for the external control of the electronic band structure in topological insulator compounds in an ARPES setting. Four external knobs are available: bulk stoichiometry, surface decoration, temperature and photon exposure. These knobs can be used in conjunction to tune the band energies near the surface and consequently influence the topological properties of the relevant electronic states.
16 pages, 8 figures
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- Experimental evidence of large-gap two-dimensional topological insulator on the surface of ZrTe5
- Work function of bulk-insulating topological insulator Bi2-xSbxTe3-ySey
- Light-Tunable Surface State and Hybridization Gap in Magnetic Topological Insulator MnBiTe
- Band Structure of Topological Insulator BiSbTe1.25Se1.75
- Trigger of the ubiquitous surface band bending in 3D topological insulators
- Comparative study of rare earth hexaborides using high resolution angle-resolved photoemission
- Prominent metallic surface conduction and the singular magnetic response of topological Dirac fermion in three-dimensional topological insulator BiSbTeSe
- Angle-resolved and core-level photoemission study of interfacing the topological insulator Bi1.5Sb0.5Te1.7Se1.3 with Ag, Nb and Fe
- Metal-insulator transition and tunable Dirac-cone surface state in the topological insulator TlBi1-xSbxTe2 studied by angle-resolved photoemission
- Quantum oscillations of the topological surface states in low carrier concentration crystals of BiSbTeSe
- Spatial Control of Charge Doping in n-Type Topological Insulators
- Converting topological insulators into topological metals within the tetradymite family
- Micro-metric electronic patterning of a topological band structure using a photon beam
- Intrinsic surface dipole in topological insulators
- Observation of Dirac Charge Density Waves in BiTeSe