Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit

Abstract

Pulsed magnetic fields of up to 55T are used to investigate the transport properties of the topological insulator Bi_2Se_3 in the extreme quantum limit. For samples with a bulk carrier density of n = 2.9\times10^16cm^-3, the lowest Landau level of the bulk 3D Fermi surface is reached by a field of 4T. For fields well beyond this limit, Shubnikov-de Haas oscillations arising from quantization of the 2D surface state are observed, with the ν=1 Landau level attained by a field of 35T. These measurements reveal the presence of additional oscillations which occur at fields corresponding to simple rational fractions of the integer Landau indices.

5 pages, 4 figures

References in corpus (23)

• Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
• Quantum Spin Hall Insulator State in HgTe Quantum Wells
• Half-Metallic Graphene Nanoribbons
• Topological Field Theory of Time-Reversal Invariant Insulators
• Room-Temperature Quantum Hall Effect in Graphene
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Valley filter and valley valve in graphene
• Gate-induced insulating state in bilayer graphene devices
• Electronic States of Graphene Nanoribbons
• First direct observation of Spin-textures in Topological Insulators : Spin-resolved ARPES as a probe of topological quantum spin Hall effect and Berry's phase
• Nonlocal edge state transport in the quantum spin Hall state
• Surface States of the Topological Insulator Bi_{1-x}Sb_x
• Topological confinement in bilayer graphene
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Edge states in Graphene: from gapped flat band to gapless chiral modes
• Conductance quantization and transport gap in disordered graphene nanoribbons
• Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
• Exciton condensation and charge fractionalization in a topological insulator film
• Signatures of Electron Fractionalization in Ultraquantum Bismuth
• Localized states at zigzag edges of bilayer graphene
• Signatures of surface states in bismuth at high magnetic fields
• Composite Fermions and Quantum Hall Stripes on the Topological Insulator Surface

Cited by in corpus (7)

• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Rapid Surface Oxidation as a Source of Surface Degradation Factor for Bi2Se3
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Surface versus bulk state in topological insulator Bi2Se3 under environmental disorder
• Magnetic and transport properties of rare-earth-based half-Heusler phases RPdBi: prospective systems for topological quantum phenomena
• Electron-phonon scattering in topological insulators