Topological insulator quantum dot with tunable barriers
arXiv:1201.3910 · doi:10.1021/nl203851g
Abstract
Thin (6-7 quintuple layer) topological insulator Bi2Se3 quantum dot devices are demonstrated using ultrathin (2~4 quintuple layer) Bi2Se3 regions to realize semiconducting barriers which may be tuned from Ohmic to tunneling conduction via gate voltage. Transport spectroscopy shows Coulomb blockade with large charging energy >5 meV, with additional features implying excited states.
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- Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
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- Self-assembled Bismuth Selenide (Bi2Se3) quantum dots grown by molecular beam epitaxy
- Optical response of a topological-insulator--quantum-dot hybrid interacting with a probe electric field
- Single-electron Transport in Graphene-like Nanostructures
- Absence of equilibrium edge currents in theoretical models of topological insulators
- Spherical topological-insulator nanoparticles: Quantum size effects and optical transitions
- Low-energy electronic properties of Weyl semimetal quantum dot
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- Single-Electron Transistor Made of a 3D Topological Insulator Nanoplate
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