Low-damage electron beam lithography for nanostructures on BiTe-class topological insulator thin films
arXiv:2301.11900 · doi:10.1063/5.0144726
Abstract
Nanostructured topological insulators (TIs) have the potential to impact a wide array of condensed matter physics topics, ranging from Majorana physics to spintronics. However, the most common TI materials, the BiSe family, are easily damaged during nanofabrication of devices. In this paper, we show that electron beam lithography performed with a 30 or 50 kV accelerating voltage -- common for nanopatterning in academic facilities -- damages both nonmagnetic TIs and their magnetically-doped counterparts at unacceptable levels. We additionally demonstrate that electron beam lithography with a 10 kV accelerating voltage produces minimal damage detectable through low-temperature electronic transport. Although reduced accelerating voltages present challenges in creating fine features, we show that with careful choice of processing parameters, particularly the resist, 100 nm features are reliably achievable.
arXiv comment10 pages, 5 figures
References in corpus (29)
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- High-precision realization of robust quantum anomalous Hall state in a hard ferromagnetic topological insulator
- Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
- Room temperature spin-orbit torque switching induced by a topological insulator
- Observation of Dirac plasmons in a topological insulator
- Unconventional Josephson Effect in Hybrid Superconductor-Topological Insulator Devices
- Room temperature magnetization switching in topological insulator-ferromagnet heterostructures by spin-orbit torques
- Observation of Dirac Holes and Electrons in a Topological Insulator
- Josephson supercurrent through a topological insulator surface state
- Chiral topological superconductor and half-integer conductance plateau from quantum anomalous Hall plateau transition
- Opportunities in topological insulator devices
- Conductance and noise signatures of Majorana backscattering
- Universal Scaling of Quantum Anomalous Hall Plateau Transition
- Observation of the zero Hall plateau in a quantum anomalous Hall insulator
- Evidence for an anomalous current phase relation in topological insulator Josephson junctions
- Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect
- Influence of Topological Edge States on the Properties of Al/Bi2Se3/Al Hybrid Josephson Devices
- Experimental realization of SQUIDs with topological insulator junctions
- Induced unconventional superconductivity on the surface states of BiTe topological insulator
- Finite momentum Cooper pairing in 3D topological insulator Josephson junctions
- Topological insulator quantum dot with tunable barriers
- Zero-field Edge Magnetoplasmons in a Magnetic Topological Insulator
- Signature of a topological phase transition in the Josephson supercurrent through a topological insulator
- Quasi-ballistic transport in HgTe quantum-well nanostructures
- Topological insulator nanoribbon Josephson junctions: evidence for size effect in transport properties
- High transparency Bi2Se3 topological insulator nanoribbon Josephson junctions with low resistive noise properties
- Fractional AC Josephson effect in a topological insulator proximitized by a self-formed superconductor
- Gate Tunable Supercurrent in Josephson Junctions Based on Bi2Te3 Topological Insulator Thin Films