Quasi-ballistic transport in HgTe quantum-well nanostructures
arXiv:cond-mat/0305078 · doi:10.1063/1.1602170
Abstract
The transport properties of micrometer scale structures fabricated from high-mobility HgTe quantum-wells have been investigated. A special photoresist and Ti masks were used, which allow for the fabrication of devices with characteristic dimensions down to 0.45 m. Evidence that the transport properties are dominated by ballistic effects in these structures is presented. Monte Carlo simulations of semi-classical electron trajectories show good agreement with the experiment.
3 pages, 3 figures; minor revisions: replaced "inelastic mean free path" with "transport mean free path"; corrected typing errors; restructered most paragraphs for easier reading; accepted for publication in APL