Maximizing the thermoelectric performance of topological insulator Bi2Te3 films in the few-quintuple layer regime
arXiv:1505.03292 · doi:10.1039/c6nr00724d
Abstract
Using first-principles calculations and Boltzmann theory, we explore the feasibility to maximize the thermoelectric figure of merit (ZT) of topological insulator Bi2Te3 films in the few-quintuple layer regime. We discover that the delicate competitions between the surface and bulk contributions, coupled with the overall quantum size effects, lead to a novel and generic non-monotonous dependence of ZT on the film thickness. In particular, when the system crosses into the topologically non-trivial regime upon increasing the film thickness, the much longer surface relaxation time associated with the robust nature of the topological surface states results in a maximal ZT value, which can be further optimized to ~2.0 under physically realistic conditions. We also reveal the appealing potential of bridging the long-standing ZT asymmetry of p- and n-type Bi2Te3 systems.
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- Origin of the Electron-Phonon Interaction of Topological Semimetal Surfaces Measured with Helium Atom Scattering
- Nanoscale Surface Dynamics of BiTe(111): Observation of a Prominent Surface Acoustic Wave and the Role of van der Waals Interactions
- Thermoelectric Effects and Topological Insulators
- THz Surface Modes and Electron-Phonon Coupling in BiSe(111)
- Quantum Transport and Potential of Topological States for Thermoelectricity in BiTe Thin Films
- Thermoelectric calculations of ring-shaped bands in two-dimensional BiTe, BiSe and SbTe: a comparison of simple scattering approximations
- First-principles study of the thermoelectric properties of quaternary tetradymite BiSbSeTe2
- Magnetic field-dependent resistance crossover and logarithmic to non-saturating magnetoresistance in topological insulator BiTe
- Control of intervalley scattering in BiTe via temperature-dependent band renormalization