Thermoelectric properties of Bi2Te3 atomic quintuple thin films

Abstract

Motivated by recent experimental realizations of quintuple atomic layer films of Bi2Te3,the thermoelectric figure of merit, ZT, of the quintuple layer is calculated and found to increase by a factor of 10 (ZT = 7.2) compared to that of the bulk at room temperature. The large enhancement in ZT results from the change in the distribution of the valence band density of modes brought about by the quantum confinement in the thin film. The theoretical model uses ab initio electronic structure calculations (VASP) with full quantum-mechanical structure relaxation combined with a Landauer formalism for the linear-response transport coefficients.

4 figures, submitted to APL

References in corpus (7)

• A topological Dirac insulator in a quantum spin Hall phase : Experimental observation of first strong topological insulator
• Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
• Oscillatory crossover from two dimensional to three dimensional topological insulators
• Mechanically-Exfoliated Stacks of Thin Films of Bismuth Telluride Topological Insulators with Enhanced Thermoelectric Performance
• On Landauer vs. Boltzmann and Full Band vs. Effective Mass Evaluation of Thermoelectric Transport Coefficients
• Thermoelectric properties of electrically gated bismuth telluride nanowires
• Large thermoelectric figure of merit for 3D topological Anderson insulators via line dislocation engineering

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• Tunneling behavior of bismuth telluride nanoplates in electrical transport
• Thermoelectric refrigerator based on asymmetric surfaces of a magnetic topological insulator
• Low-Frequency Current Fluctuations in Graphene-like Exfoliated Thin-Films of Topological Insulators