Charged impurity scattering in two-dimensional materials with ring-shaped valence bands: GaS, GaSe, InS, and InSe

Abstract

The singular density of states and the two Fermi wavevectors resulting from a ring-shaped or "Mexican hat" valence band give rise to unique trends in the charged impurity scattering rates and charged impurity limited mobilities. Ring shaped valence bands are common features of many monolayer and few-layer two-dimensional materials including the III-VI materials GaS, GaSe, InS, and InSe. The wavevector dependence of the screening, calculated within the random phase approximation, is so strong that it is the dominant factor determining the overall trends of the scattering rates and mobilities with respect to temperature and hole density. Charged impurities placed on the substrate and in the 2D channel are considered. The different wavevector dependencies of the bare Coulomb potentials alter the temperature dependence of the mobilities. Moving the charged impurities 5 $\mathring{A}$ from the center of the channel to the substrate increases the mobility by an order of magnitude.

arXiv comment11 pages, 11 figures

References in corpus (16)

• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Tunable Magnetism and Half-Metallicity in Hole-doped Monolayer GaSe
• Electrons and phonons in single layers of hexagonal indium chalcogenides from ab initio calculations
• Multiferroic Two-Dimensional Materials
• Charge Scattering and Mobility in Atomically Thin Semiconductors
• Band Structure and Optical Transitions in Atomic Layers of Hexagonal Gallium Chalcogenides
• Mexican Hat and Rashba Bands in Few-Layer van der Waals Materials
• Structural, Vibrational and Electronic Properties of Single Layer Hexagonal Crystals of Groups IV and V
• Mobility enhancement and temperature dependence in top-gated single-layer MoS2
• Thermoelectric properties of Bi2Te3 atomic quintuple thin films
• Anomalous sequence of quantum Hall liquids revealing tunable Lifshitz transition in bilayer graphene
• Fermi Liquid Theory of a Fermi Ring
• Thickness and strain effects on the thermoelectric transport in nanostructured Bi2Se3
• Band Structure, Band Offsets, Substitutional Doping, and Schottky Barriers in InSe
• Gate-independent energy gap in non-covalently intercalated bilayer graphene on SiC(0001)
• Anomalous screening in two-dimensional materials with an extremum ring in the dispersion law

Cited by in corpus (7)

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• Strong electron-phonon coupling and its influence on the transport and optical properties of hole-doped single-layer InSe
• Analysis of simple scattering models on the thermoelectric performance of analytical electron dispersions
• Thermoelectric calculations of ring-shaped bands in two-dimensional Bi${}_2$Te${}_3$, Bi${}_2$Se${}_3$ and Sb${}_2$Te${}_3$: a comparison of simple scattering approximations
• Nonperturbative self-consistent electron-phonon spectral functions and transport
• Electronic transport and dynamical polarization in bilayer silicene-like system
• Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions