Coulomb drag in metal monochalcogenides double-layer structures with Mexican-hat band dispersions

Abstract

We theoretically study the Coulomb drag resistivity and plasmon modes behavior for a system composed of two parallel p-type doped GaS monolayers with Mexican-hat valence energy band using the Boltzmann transport theory formalism. We investigate the effect of temperature,$T$, carrier density,$p$, and layer separation,$d$, on the plasmon modes and drag resistivity within the energy-independent scattering time approximation. Our results show that the density dependence of plasmon modes can be approximated by$p^{0.5}$. Also, the calculations suggest a$d^{0.2}$ and a$d^{0.1}$ dependencies for the acoustic and optical plasmon energies, respectively. Interestingly, we obtain that the behavior of drag resistivity in the double-layer metal monochalcogenides swings between the behavior of a double-quantum well system with parabolic dispersion and that of a double-quantum wire structure with a large carrier density of states. In particular, the transresistivity value reduces exponentially with increasing the distance between layers. Furthermore, the drag resistivity changes as$T^2/p^4$ ($T^{2.8}/p^{4.5}$) at low (intermediate) temperatures. Finally, we compare the drag resistivity as a function of temperature for GaS with other Mexican-hat materials including GaSe and InSe and find that it adopts higher values when the metal monochalcogenide has smaller Mexican-hat height.

arXiv comment9 pages, 12 figures

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