Charge Scattering and Mobility in Atomically Thin Semiconductors

Abstract

The electron transport properties of atomically thin semiconductors such as MoS2 have attracted significant recent scrutiny and controversy. In this work, the scattering mechanisms responsible for limiting the mobility of single layer semiconductors are evaluated. The roles of individual scattering rates are tracked as the 2D electron gas density is varied over orders of magnitude at various temperatures. From a comparative study of the individual scattering mechanisms, we conclude that all current reported values of mobilities in atomically thin transition-metal dichalcogenide semiconductors are limited by ionized impurity scattering. When the charged impurity densities are reduced, remote optical phonon scattering will determine the ceiling of the highest mobilities attainable in these ultrathin materials at room temperature. The intrinsic mobilities will be accessible only in clean suspended layers, as is also the case for graphene. Based on the study, we identify the best choices for surrounding dielectrics that will help attain the highest mobilities.

11 pages, 6 figures

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Cited by in corpus (33)

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• S2DS: Physics-Based Compact Model for Circuit Simulation of Two-Dimensional Semiconductor Devices Including Non-Idealities
• Hot-electron cooling by acoustic and optical phonons in monolayers of MoS${}_2$ and other transition-metal dichalcogenides
• Anisotropic Dielectric Breakdown Strength of Single Crystal Hexagonal Boron Nitride
• 2-D materials for ultra-scaled field-effect transistors: hundred candidates under the ab initio microscope
• High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2
• Excitons and trions in monolayer transition metal dichalcogenides: A comparative study between the multiband model and the quadratic single-band model
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• Quantum transport and observation of Dyakonov-Perel spin-orbit scattering in monolayer MoS${}_2$
• Strain induced mobility modulation in single-layer MoS${}_2$
• Opportunities in Electrically Tunable 2D Materials Beyond Graphene: Recent Progress and Future Outlook
• Excitons, trions, and biexcitons in transition metal dichalcogenides: magnetic field dependence
• Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide
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• Clean BN encapsulated 2D FETs with lithography compatible contacts
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• Quantum Lifetime Spectroscopy and Magnetotunneling in Double Bilayer Graphene Heterostructures
• Enhancement of Carrier Mobility in Semiconductor Nanostructures by Carrier Distribution Engineering
• Spotting 2-D Atomic Layers on Aluminum Nitride Thin Films
• Carrier Mobility and High-Field Velocity in 2D Transition Metal Dichalcogenides: Degeneracy and Screening
• An analytic virtual-source-based current-voltage model for ultra-thin black phosphorus field-effect transistors
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• Ab-initio Van der Waals electrodynamics: polaritons and electron scattering from plasmons and phonons in BN-capped graphene