High Intrinsic Mobility and Ultrafast Carrier Dynamics in Multilayer Metal Dichalcogenide MoS2

Abstract

The ultimate limitations on carrier mobilities in metal dichalcogenides, and the dynamics associated with carrier relaxation, are unclear. We present measurements of the frequency-dependent conductivity of multilayer dichalcogenide MoS2 by optical-pump terahertz-probe spectroscopy. We find mobilities in this material approaching 4200 cm2/Vs at low temperatures. The temperature dependence of scattering indicates that the mobility, an order of magnitude larger than previously reported for MoS2, is intrinsically limited by acoustic phonon scattering at THz frequencies. Our measurements of carrier relaxation reveal picosecond cooling times followed by recombination lasting tens of nanoseconds and dominated by Auger scattering into defects. Our results provide a useful context in which to understand and evaluate the performance of MoS2-based electronic and optoelectronic devices.

arXiv comment13 pages, 8 figures

References in corpus (21)

• Atomically thin MoS2: A new direct-gap semiconductor
• MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
• Grains and grain boundaries in highly crystalline monolayer molybdenum disulfide
• The Valley Hall Effect in MoS2 Transistors
• Mobility engineering and metal-insulator transition in monolayer MoS2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• First-principles study of the phonon-limited mobility in n-type single-layer MoS2
• Experimental demonstration of continuous electronic structure tuning via strain in atomically thin MoS2
• High Mobility Ambipolar MoS2 Field-Effect Transistors: Substrate and Dielectric Effects
• Low-temperature photocarrier dynamics in monolayer MoS2
• Observation of Intense Second Harmonic Generation from MoS${}_2$ Atomic Crystals
• Mechanisms of photoconductivity in atomically thin MoS2
• Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides
• Absorption of Light by Excitons and Trions in Monolayers of Metal Dichalcogenide MoS${}_2$: Experiments and Theory
• Ultrafast Relaxation Dynamics of Hot Optical Phonons in Graphene
• Charge Scattering and Mobility in Atomically Thin Semiconductors
• Large Area Single Crystal (0001) Oriented MoS2 Thin Films
• Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2
• Charge carrier dynamics in bulk MoS2 crystal studied by transient absorption microscopy
• Intrinsic carrier mobility of multi-layered MoS${}_2$ field-effect transistors on SiO${}_2$
• Infrared Studies of the Onset of Conductivity in Ultra-Thin Pb Films

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• Intervalley scattering in MoS${}_2$ imaged by two-photon photoemission with a high-harmonic probe
• Dielectric Property of MoS2 Crystal in Terahertz and Visible Region
• Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide
• The first- and second-order magneto-optical effects and intrinsically anomalous transport in 2D van der Waals layered magnets CrXY (X = S, Se, Te; Y = Cl, Br, I)
• Ultrafast photocurrent and absorption microscopy of few-layer TMD devices isolate rate-limiting dynamics driving fast and efficient photoresponse
• Electron-phonon interaction, excitations and ultrafast photoemission from doped monolayer MoS2
• Pump-induced terahertz conductivity response and peculiar bound state in Mn3Si2Te6
• Mid-Infrared Ultrafast Carrier Dynamics in Thin Film Black Phosphorus