Strain induced mobility modulation in single-layer MoS${}_2$

Abstract

In this paper the effect of biaxial and uniaxial strain on the mobility of single-layer MoS${}_2$ for temperatures T $>$ 100 K is investigated. Scattering from intrinsic phonon modes, remote phonon and charged impurities are considered along with static screening. Ab-initio simulations are utilized to investigate the strain induced effects on the electronic bandstructure and the linearized Boltzmann transport equation is used to evaluate the low-field mobility under various strain conditions. The results indicate that the mobility increases with tensile biaxial and tensile uniaxial strain along the armchair direction. Under compressive strain, however, the mobility exhibits a non-monotonic behavior when the strain magnitude is varied. In particular, with a relatively small compressive strain of 1% the mobility is reduced by about a factor of two compared to the unstrained condition, but with a larger compressive strain the mobility partly recovers such a degradation.

References in corpus (10)

• Electric Field Effect in Atomically Thin Carbon Films
• Two Dimensional Atomic Crystals
• Boron nitride substrates for high-quality graphene electronics
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Bandgap Engineering of Strained Monolayer and Bilayer MoS2
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Quasiparticle band structures and optical properties of strained monolayer MoS2 and WS2
• Charge Scattering and Mobility in Atomically Thin Semiconductors
• Single Particle Transport in Two-dimensional Heterojunction Interlayer Tunneling Field Effect Transistor

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