416 citations · 826 across the 11 of their papers we have counts for
11 papers
Multi-level Operation of FeFETs Memristors: the Crucial Role of Three Dimensional Effects
Daniel Lizzit, Thomas Bernardi, David Esseni
This paper investigates and compares through a comprehensive TCAD analysis 2D and 3D simulations for ferroelectric based FETs. We provide clear evidence that the multiple read cond…
Operation and Design of Ferroelectric FETs for a BEOL Compatible Device Implementation
Daniel Lizzit, David Esseni
We present a study based on numerical simulations and comparative analysis of recent experimental data concerning the operation and design of FeFETs. Our results show that a proper…
Limitations to Electrical Probing of Spontaneous Polarization in Ferroelectric-Dielectric Heterostructures
Mattia Segatto, Riccardo Fontanini, Francesco Driussi +2
An accurate estimate of the ferroelectric polarization in ferroelectric-dielectric stacks is important from a materials science perspective, and it is also crucial for the developm…
Ferroelectric based FETs and synaptic devices for highly energy efficient computational technologies
David Esseni, Riccardo Fontanini, Daniel Lizzit +3
The technological exploitation of ferroelectricity in CMOS electron devices offers new design opportunities, but also significant challenges from an integration, optimization and m…
Modelling and design of FTJs as high reading-impedance synaptic devices
Riccardo Fontanini, Marco Massarotto, Ruben Specogna +3
We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a mode…
Dependable contact related parameter extraction in graphene-metal junctions
Amit Gahoi, Satender Kataria, Francesco Driussi +5
The accurate extraction and the reliable, repeatable reduction of graphene - metal contact resistance (R) are still open issues in graphene technology. Here, we demonstrate t…