Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors
arXiv:1708.03857 · doi:10.1021/acsnano.6b02533
Abstract
Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentally verified in graphene using uniaxial strain in graphene. Here we report experimental and theoretical data on the uni- and biaxial piezoresistive properties of suspended graphene membranes applied to piezoresistive pressure sensors. A detailed model that utilizes a linearized Boltzman transport equation describes accurately the charge carrier density and mobility in strained graphene, and hence the gauge factor. The gauge factor is found to be practically independent of the doping concentration and crystallographic orientation of the graphene films. These investigations provide deeper insight into the piezoresistive behavior of graphene membranes.
References in corpus (16)
- Ultrahigh electron mobility in suspended graphene
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Impermeable Atomic Membranes from Graphene Sheets
- Uniaxial Strain in Graphene by Raman Spectroscopy: G peak splitting, Gruneisen Parameters and Sample Orientation
- A tight-binding approach to uniaxial strain in graphene
- Wafer-scale synthesis and transfer of graphene films
- Ultra-strong Adhesion of Graphene Membranes
- Realization of a High Mobility Dual-gated Graphene Field Effect Transistor with Al2O3 Dielectric
- Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
- Growth and properties of few-layer graphene prepared by chemical vapor deposition
- Gap opening in graphene by shear strain
- Resistive Graphene Humidity Sensors with Rapid and Direct Electrical Readout
- Random strain fluctuations as dominant disorder source for high-quality on-substrate graphene devices
- Introducing Nonuniform Strain to Graphene Using Dielectric Nanopillars
- Light emission, light detection and strain sensing with nanocrystalline graphene
- Large Scale Integration of Graphene Transistors for Potential Applications in the Back End of the Line
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