416 citations · 1.2k across the 7 of their papers we have counts for
7 papers
Suspended graphene membranes with attached silicon proof masses as piezoresistive NEMS accelerometers
Xuge Fan, Fredrik Forsberg, Anderson D. Smith +5
Graphene is an atomically thin material that features unique electrical and mechanical properties, which makes it an extremely promising material for future nanoelectromechanical s…
Manufacture and Characterization of Graphene Membranes with Suspended Silicon Proof Masses for MEMS and NEMS Applications
Xuge Fan, Anderson D. Smith, Fredrik Forsberg +8
Unparalleled strength, chemical stability, ultimate surface-to-volume ratio and excellent electronic properties of graphene make it an ideal candidate as a material for membranes i…
Graphene ribbons with suspended masses as transducers in ultra-small nanoelectromechanical accelerometers
Xuge Fan, Fredrik Forsberg, Anderson D. Smith +7
Nanoelectromechanical system (NEMS) sensors and actuators could be of use in the development of next generation mobile, wearable, and implantable devices. However, these NEMS devic…
Piezoresistive Properties of Suspended Graphene Membranes under Uniaxial and Biaxial Strain in Nanoelectromechanical Pressure Sensors
Anderson D. Smith, Frank Niklaus, Alan Paussa +9
Graphene membranes act as highly sensitive transducers in nanoelectromechanical devices due to their ultimate thinness. Previously, the piezoresistive effect has been experimentall…
Integrating MEMS and ICs
Andreas C. Fischer, Fredrik Forsberg, Martin Lapisa +4
The majority of microelectromechanical system (MEMS) devices must be combined with integrated circuits (ICs) for operation in larger electronic systems. While MEMS transducers sens…
Electromechanical Piezoresistive Sensing in Suspended Graphene Membranes
A. D. Smith, F. Niklaus, A. Paussa +9
Monolayer graphene exhibits exceptional electronic and mechanical properties, making it a very promising material for nanoelectromechanical (NEMS) devices. Here, we conclusively de…
Characterization and Predictive Modeling of Epitaxial Silicon-Germanium Thermistor Layers
B. Gunnar Malm, Mohammadreza Kolahdouz, Fredrik Forsberg +1
The thermal coefficient of resistance (TCR) for epitaxial silicon-germanium (SiGe) layers has been analyzed by experiment and simulation. Predictive simulation using drift-diffusio…