Gap opening in graphene by shear strain

Abstract

We exploit the concept of strain-induced band structure engineering in graphene through the calculation of its electronic properties under uniaxial, shear, and combined uniaxial-shear deformations. We show that by combining shear deformations to uniaxial strains it is possible modulate the graphene energy gap value from zero up to $0.9$ eV. Interestingly enough, the use of a shear component allows for a gap opening at moderate absolute deformation, safely smaller than the graphene failure strain.

to appear on PRB - Rapid Communication

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• Gap opening in graphene by simple periodic inhomogeneous strain
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• Universal classification of twisted, strained and sheared graphene moiré superlattices
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• Correlation-Driven Dimerization and Topological Gap Opening in Isotropically Strained Graphene
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• Landau Levels in Uniaxially Strained Graphene: A Geometrical Approach
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• Merging Dirac points and topological phase transitions in the tight-binding model on the generalized honeycomb lattice
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• Strain-induced modulation of Dirac cones and van Hove singularities in twisted graphene bilayer
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• Improved performance of graphene transistors by strain engineering
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• Critical behavior for point monopole and dipole electric impurities in uniformily and uniaxially strained graphene
• Ballistic transport properties across nonuniform strain barriers in graphene
• Kekulé valence bond order in the Hubbard model on the honeycomb lattice with possible lattice distortions for graphene
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• Hofstadter-like spectrum and Magnetization of Artificial Graphene constructed with cylindrical and elliptical quantum dots
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• Quantum-Hall Spectroscopy of Elliptically Deformed Graphene Nanobubble Qubits
• Transport in Suspended Monolayer and Bilayer Graphene Under Strain: A New Platform for Material Studies
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