Phonon and structural changes in deformed Bernal stacked bilayer graphene

Abstract

We present the first Raman spectroscopic study of Bernal bilayer graphene flakes under uniaxial tension. Apart from a purely mechanical behavior in flake regions where both layers are strained evenly, certain effects stem from inhomogeneous stress distribution across the layers. These phenomena such as the removal of inversion symmetry in bilayer graphene may have important implications in the band-gap engineering providing an alternative route to induce the formation of a band-gap.

21 pages, 7 figures

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Cited by in corpus (14)

• Tunable macroscale structural superlubricity in two-layer graphene via strain engineering
• In-plane force fields and elastic properties of graphene
• Graphenes flakes under controlled biaxial deformation
• Strain-induced band gaps in bilayer graphene
• Two-dimensional analysis of the double-resonant 2D Raman mode in bilayer graphene
• The Strength of Mechanically-Exfoliated Monolayer Graphene
• Stress-transfer from polymer substrates to monolayer and few-layer graphenes
• An atomistic insight into moiré reconstruction in Twisted Bilayer Graphene beyond the magic angle
• Polarization dependence of double resonant Raman scattering band in bilayer graphene
• Spectroscopic investigations of phonons in epitaxial graphene
• Non-Eulerian behavior of graphitic materials under compression
• Strain impacts on commensurate bilayer graphene superlattices: distorted trigonal warping, emergence of bandgap and direct-indirect bandgap transition
• Nanomechanical strain concentration on a 2D nanobridge within a large suspended bilayer graphene for molecular mass detection
• Strain-induced stacking transition in bilayer graphene