Controlling Energy Gap of Bilayer Graphene by Strain

Abstract

Using the first principles calculations, we show that mechanically tunable electronic energy gap is realizable in bilayer graphene if different homogeneous strains are applied to the two layers. It is shown that the size of energy gap can be simply controlled by adjusting the strength and direction of these strains. We also show that the effect originates from the occurrence of strain-induced pseudo-scalar potentials in graphene. When homogeneous strains with different strengths are applied to each layer of bilayer graphene, transverse electric fields across the two layers can be generated without any external electronic sources, thereby opening an energy gap. The results demonstrate a simple mechanical method of realizing pseudo-electromagnetism in graphene and suggest a maneuverable approach to fabrication of electromechanical devices based on bilayer graphene.

4 pages, 3 figures; reference added; some sentences modified slightly

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Cited by in corpus (16)

• The electronic properties of bilayer graphene
• Graphene-based technologies for energy applications, challenges and perspectives
• Tunable Supercurrent at the Charge Neutrality Point via Strained Graphene Junctions
• Polarization dependence of double resonant Raman scattering band in bilayer graphene
• Strain-induced conduction gap in vertical devices made of twisted graphene layers
• Casimir interactions in strained graphene systems
• Planar Hall Effect in Quasi-Two-Dimensional Materials
• One-Dimensional Moiré Physics and Chemistry in Heterostrained Bilayer Graphene
• Tilt induced vortical response and mixed anomaly in inhomogeneous Weyl matter
• Topologically protected gap states and resonances in gated trilayer graphene
• Nanomechanical strain concentration on a 2D nanobridge within a large suspended bilayer graphene for molecular mass detection
• Canted antiferromagnetism and excitonic order in gated double-layer graphene
• Planar Nernst effect from hidden band geometry in layered two-dimensional materials
• Gapless states and current control in strongly distorted gated trilayer graphene
• Strain-induced stacking transition in bilayer graphene
• Straintronics and twistronics in bilayer graphene