Electronic structure and layer-resolved transmission of bilayer graphene nanoribbon in the presence of vertical fields

Abstract

Electronic properties of bilayer graphene are distinct from both the conventional two dimensional electron gas and monolayer graphene due to its particular chiral properties and excitation charge carrier dispersions. We study the effect of strain on the electronic structure, the edge-states and charge transport of bilayer graphene nanoribbon at zero-temperature. We demonstrate a valley polarized quantum Hall effect in biased bilayer graphene when the system is subjected to a perpendicular magnetic field. In this system a topological phase transition from a quantum valley Hall to a valley polarized quantum Hall phase can occur by tuning the interplanar strain. Furthermore, we study the layer-resolved transport properties by calculating the layer polarized quantity by using the recursive Green's function technique and show that the resulting layer polarized value confirms the obtained phases. These predictions can be verified by experiments and our results demonstrate the possibility for exploiting strained bilayer graphene in the presence of external fields for electronics and valleytronics devices.

10 pages, 9 figures, typos are corrected

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Cited by in corpus (9)

• Theory of strain in single-layer transition metal dichalcogenides
• Valley Zeeman effect and spin-valley polarized conductance in monolayer MoS${}_2$ in a perpendicular magnetic field
• Acoustogalvanic effect in Dirac and Weyl semimetals
• Strain-driven chiral phonons in two-dimensional hexagonal materials
• Mechanical Manipulations on Electronic Transport of Graphene Nanoribbons
• New supercurrent pattern in quantum point contact with strained graphene nanoribbon
• Harmonic generation in bent graphene with artificially-enhanced spin-orbit coupling
• Giant Shear Displacement by Light-Induced Raman Force in Bilayer Graphene
• Light-induced shear phonon splitting and instability in bilayer graphene