Strain and field modulation in bilayer graphene band structure

Abstract

Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer distance results in higher bandgap modulation, as expected. Furthermore, above about 2.5 angstrom interlayer distance, the bandgap is direct, follows a convex relation to electric field and saturates to a value determined by the interlayer distance. However, below about 2.5 angstrom, the bandgap is indirect, the trend becomes concave and a threshold electric field is observed, which also depends on the stacking distance.

3 pages, 5 figures - v1 and v2 are the same, uploaded twice - v3, some typos fixed and a reference added

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Cited by in corpus (1)

• On the Possibility of an Electronic-structure Modulation Transistor