Strain and field modulation in bilayer graphene band structure

Abstract

Using an external electric field, one can modulate the bandgap of Bernal stacked bilayer graphene by breaking A-~B symmetry. We analyze strain effects on the bilayer graphene using the extended Huckel theory and find that reduced interlayer distance results in higher bandgap modulation, as expected. Furthermore, above about 2.5 angstrom interlayer distance, the bandgap is direct, follows a convex relation to electric field and saturates to a value determined by the interlayer distance. However, below about 2.5 angstrom, the bandgap is indirect, the trend becomes concave and a threshold electric field is observed, which also depends on the stacking distance.

3 pages, 5 figures - v1 and v2 are the same, uploaded twice - v3, some typos fixed and a reference added

References in corpus (12)

• The electronic properties of graphene
• Landau level degeneracy and quantum Hall effect in a graphite bilayer
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Gate-induced insulating state in bilayer graphene devices
• Asymmetry gap in the electronic band structure of bilayer graphene
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Armchair graphene nanoribbons: Electronic structure and electric field modulation
• Theoretical study of isolated dangling bonds, dangling bond wires and dangling bond clusters on H:Si(100)-(2$\times$1) surface
• An Extended Huckel Theory based Atomistic Model for Graphene Nanoelectronics
• Incoherent Transport through Molecules on Silicon in the vicinity of a Dangling Bond
• Electrical transport in two dimensional electron and hole gas on Si(001)-(2x1) surface
• An atomistic quantum transport solver with dephasing for field-effect transistors

Cited by in corpus (8)

• Electronic properties of a biased graphene bilayer
• Strain and Electric Field Modulation of the Electronic Structure of Bilayer Graphene
• Strain-induced band gaps in bilayer graphene
• Indirect band gap in graphene from modulation of the Fermi velocity
• Electronic structure and layer-resolved transmission of bilayer graphene nanoribbon in the presence of vertical fields
• Bilayer Graphene Quantum Dot Defined by Topgates
• On the Possibility of an Electronic-structure Modulation Transistor
• A hands-on laboratory and computational experience for nanoscale materials, devices and systems education for electronics, spintronics and optoelectronics