Strain-induced pseudo-magnetic field for novel graphene electronics

Abstract

Particular strain geometry in graphene could leads to a uniform pseudo-magnetic field of order 10T and might open up interesting applications in graphene nano-electronics. Through quantum transport calculations of realistic strained graphene flakes of sizes of 100nm, we examine possible means of exploiting this effect for practical electronics and valleytronics devices. First, we found that elastic backscattering at rough edges leads to the formation of well defined transport gaps of order 100meV under moderate maximum strain of 10%. Second, the application of a real magnetic field induced a separation, in space and energy, of the states arising from different valleys, leading to a way of inducing bulk valley polarization which is insensitive to short range scattering.

5 pages, 5 figures

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• Electronic structure and layer-resolved transmission of bilayer graphene nanoribbon in the presence of vertical fields
• The Haldane model under nonuniform strain
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• Strained graphene Hall bar
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• Phase diagrams and edge-state transitions in graphene with spin-orbit coupling and magnetic and pseudomagnetic fields
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