All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics
arXiv:2209.02098 · doi:10.1063/5.0114386
Abstract
Probing and controlling the valley degree of freedom in graphene systems by transport measurements has been a major challenge to fully exploit the unique properties of this two-dimensional material. In this theoretical work, we show that this goal can be achieved by a quantum-wire geometry made of gapped graphene that acts as a valley filter with the following favorable features: i) all electrical gate control, ii) electrically switchable valley polarity, iii) robustness against configuration fluctuation, and iv) potential for room temperature operation. This valley filtering is accomplished by a combination of gap opening in either bilayer graphene with a vertical electrical field or single layer graphene on h-BN, valley splitting with a horizontal electric field, and intervalley mixing by defect scattering. In addition to functioning as a building block for valleytronics, the proposed configuration makes it possible to convert signals between electrical and valleytronic forms, thus allowing for the integration of electronic and valleytronic components for the realization of electro-valleytronics.
References in corpus (37)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Experimental Observation of Quantum Hall Effect and Berry's Phase in Graphene
- Coupled spin and valley physics in monolayers of MoS2 and other group-VI dichalcogenides
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- Valley contrasting physics in graphene: magnetic moment and topological transport
- Landau level degeneracy and quantum Hall effect in a graphite bilayer
- Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
- Valley filter and valley valve in graphene
- Gate-induced insulating state in bilayer graphene devices
- Substrate-induced bandgap in graphene on hexagonal boron nitride
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Asymmetry gap in the electronic band structure of bilayer graphene
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature
- Valley Dependent Optoelectronics from Inversion Symmetry Breaking
- All-graphene integrated circuits via strain engineering
- Detecting Topological Currents in Graphene Superlattices
- Graphene valley filter using a line defect
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Gate-tunable Topological Valley Transport in Bilayer Graphene
- Origin of band gaps in graphene on hexagonal boron nitride
- Strain-induced pseudo-magnetic field for novel graphene electronics
- Valley filter in strain engineered graphene
- A valley valve and electron beam splitter
- Generation of valley polarized current in bilayer graphene
- Intrinsic valley Hall transport in atomically thin MoS2
- High On/Off Ratios in Bilayer Graphene Field Effect Transistors Realized by Surface Dopants
- Graphene quantum dots for valley-based quantum computing: A feasibility study
- Resonant valley filtering of massive Dirac electrons
- Valley qubit in gated MoS monolayer quantum dot
- Berry Curvature in Graphene: A New Approach
- Coherent Jetting behind a gate-defined Channel in Bilayer Graphene
- Theory of valley-dependent transport in graphene-based lateral quantum structures