All-electrical scheme for valley polarization in graphene
arXiv:2504.02497 · doi:10.1103/x8yx-vwng
Abstract
We propose an all-electrical setup to generate valley polarization in graphene. A finite graphene sheet is connected to two normal metal electrodes each with two terminals along its zigzag edges, while the armchair edges remain free. When a bias is applied to one terminal and the others are grounded, valley polarization emerges due to transverse momentum matching between the graphene and the metal electrodes. Significant valley polarization is achieved when the Fermi wavevector in the metal exceeds half the separation between the \( K \) and \( K' \) valleys in graphene. We analyze how conductance and valley polarization depend on geometric and electronic parameters. While increasing the width enhances both conductance and polarization, increasing the length introduces Fabry--Pérot oscillations and suppresses valley polarization due to enhanced intervalley mixing. We also examine the effects of disorder: on-site disorder in graphene increases conductance near the Dirac point but reduces valley polarization. Finally, we study the impact of imperfect armchair edges and interface roughness, finding that moderate deviations from ideal conditions still yield substantial valley polarization. Our results demonstrate a viable route to electrically controlling valley degrees of freedom in graphene-based devices.
5+4 pages. 7+2 figures
References in corpus (15)
- The electronic properties of graphene
- Generation and detection of pure valley current by electrically induced Berry curvature in bilayer graphene
- Detection of valley polarization in graphene by a superconducting contact
- Light-Induced Valleytronics in Pristine Graphene
- Generation of valley polarized current in bilayer graphene
- Valley Polarization and Inversion in Strained Graphene via Pseudo-Landau Levels, Valley Splitting of Real Landau Levels and Confined States
- Controlling Valley-Polarisation in Graphene via Tailored Light Pulses
- All-Optical Ultrafast Valley Switching in Two-Dimensional Materials
- Valley-polarization in biased bilayer graphene using circularly polarized light
- Probing valley filtering effect by Andreev reflection in zigzag graphene nanoribbon
- Finite transverse conductance in topological insulators under an applied in-plane magnetic field
- Tunable crossed Andreev reflection in a heterostructure consisting of ferromagnets, normal metal and superconductors
- Finite transverse conductance and anisotropic magnetoconductance under an applied in-plane magnetic field in two-dimensional electron gases with strong spin-orbit coupling
- Transverse currents in spin transistors
- All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics