Valley qubit in gated MoS${}_2$ monolayer quantum dot

Abstract

The aim of presented research is to design a nanodevice, based on a MoS${}_2$ monolayer, performing operations on a well-defined valley qubit. We show how to confine an electron in a gate induced quantum dot within the monolayer, and to perform the NOT operation on its valley degree of freedom. The operations are carried out all electrically via modulation of the confinement potential by oscillating voltages applied to the local gates. Such quantum dot structure is modeled realistically. Through these simulations we investigate the possibility of realization of a valley qubit in analogy with a realization of the spin qubit. We accurately model the potential inside the nanodevice accounting for proper boundary conditions on the gates and space-dependent materials permittivity by solving the generalized Poisson's equation. The time-evolution of the system is supported by realistic self-consistent Poisson-Schrödinger tight-binding calculations. The tight-binding calculations are further confirmed by simulations within the effective continuum model.

13 pages, 12 figures

References in corpus (17)

• The electronic properties of graphene
• Ultrahigh electron mobility in suspended graphene
• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Chiral tunneling and the Klein paradox in graphene
• Valley Dependent Optoelectronics from Inversion Symmetry Breaking
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Valley-spin blockade and spin resonance in carbon nanotubes
• Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe${}_2$
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Large tunable valley splitting in edge-free graphene quantum dots on boron nitride
• Electrotunable artificial molecules based on van der Waals heterostructures
• Gate-Defined One-Dimensional Channel and Broken Symmetry States in MoS${}_2$ van der Waals Heterostructures
• Symmetry-forbidden intervalley scattering by atomic defects in monolayer transition-metal dichalcogenides
• Spin-dependent Refraction at the Atomic Step of Transition-metal Dichalcogenides
• Symmetries and hybridization in the indirect interaction between magnetic moments in MoS${}_2$ nanoflakes
• Spin-valley resolved photon-assisted tunneling in carbon nanotube double quantum dots

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• Prolonging Valley Polarization Lifetime through Gate-Controlled Exciton-to-Trion Conversion in Monolayer Molybdenum Ditelluride
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• Electric Dipole Spin Resonance of 2D Semiconductor Spin Qubits
• Charge qubit in van der Waals heterostructures
• Valley and spin polarized broken symmetry states of interacting electrons in gated MoS${}_2$ quantum dots
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• Realization of valley-spin polarized current via parametric pump in monolayer $\mathrm{Mo}{\mathrm{S}}_2$
• Scanning gate microscopy mapping of edge current and branched electron flow in a transition metal dichalcogenide nanoribbon and quantum point contact
• Shape effect on the valley splitting in lead selenide nanowires
• Hydrogenic Spin-Valley states of the Bromine donor in 2H-MoTe${}_2$
• Theory of field-modulated spin-valley-orbital pseudospin physics
• All-electrical valley filtering in graphene systems (I): A path to integrated electro-valleytronics
• Electrically tunable MoSe${}_2$/WSe${}_2$ heterostructure-based quantum dot
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• Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides