Spin-valley system in a gated MoS${}_2$-monolayer quantum dot

Abstract

The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS${}_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement potential and force intervalley transitions. The present Rashba spin-orbit coupling additionally allows for spin operations. Moreover, both effects enable the spin-valley SWAP. The device structure is modeled realistically, taking into account feasible dot-forming potential and electric field that controls the Rasha coupling. Therefore, by performing reliable numerical simulations, we show how by electrically controlling the state of the electron in the device, we can obtain single- and two-qubit (thus universal) gates in a spin-valley two-qubit system. Through simulations we investigate possibility of implementation of two qubits \textit{locally}, based on single electron, with an intriguing feature that two-qubit gates are easier to realize than single ones.

arXiv comment13 pages, 17 figures

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• Spin Resonance Amplitude and Frequency of a Single Atom on a Surface in a Vector Magnetic Field
• Gate-defined, Accumulation-mode Quantum Dots in Monolayer and Bilayer WSe${}_2$
• Spin-valley locking for in-gap quantum dots in a MoS2 transistor
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• Electric Dipole Spin Resonance of 2D Semiconductor Spin Qubits
• Valley and spin polarized broken symmetry states of interacting electrons in gated MoS${}_2$ quantum dots
• Valley-dependent transport through graphene quantum dots due to proximity-induced, staggered spin-orbit couplings
• Interacting holes in a gated WSe${}_2$ quantum channel: valley correlations and zigzag Wigner crystal
• Electrically tunable MoSe${}_2$/WSe${}_2$ heterostructure-based quantum dot
• Resistively detected electron spin resonance and g-factor in few-layer exfoliated MoS2 devices
• Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides