Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides

Abstract

We develop a microscopic and atomistic theory of electron spin-based qubits in gated quantum dots in a single layer of transition metal dichalcogenides. The qubits are identified with two degenerate locked spin and valley states in a gated quantum dot. The two-qubit states are accurately described using a multi-million atom tight-binding model solved in wavevector space. The spin-valley locking and strong spin-orbit coupling result in two degenerate states, one of the qubit states being spin-down located at the $+K$ valley of the Brillouin zone, and the other state located at the $-K$ valley with spin up. We describe the qubit operations necessary to rotate the spin-valley qubit as a combination of the applied vertical electric field, enabling spin-orbit coupling in a single valley, with a lateral strongly localized valley-mixing gate.

References in corpus (48)

• The electronic properties of graphene
• Atomically thin MoS2: A new direct-gap semiconductor
• Van der Waals heterostructures
• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Three-band tight-binding model for monolayers of group-VIB transition metal dichalcogenides
• Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides
• Quantum CNOT Gate for Spins in Silicon
• Tight-binding model and direct-gap/indirect-gap transition in single-layer and multi-layer MoS${}_2$
• The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
• Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
• Quantum computing with spin cluster qubits
• Effective lattice Hamiltonian for monolayer MoS2 : Tailoring electronic structure with perpendicular electric and magnetic fields
• \textit{Ab-initio} Tight-Binding Hamiltonian for Transition Metal Dichalcogenides
• Atomistic defect states as quantum emitters in monolayer MoS${}_2$
• Gate Defined Quantum Confinement in Suspended Bilayer Graphene
• Gate-based single-shot readout of spins in silicon
• Spintronics in MoS_2 monolayer quantum wires
• Spin States in Graphene Quantum Dots
• Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
• Voltage-tunable singlet-triplet transition in lateral quantum dots
• A tight-binding model for MoS${}_2$ monolayers
• Excited states in bilayer graphene quantum dots
• Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
• Electronic Band Structure of Transition Metal Dichalcogenides from Ab Initio and Slater-Koster Tight-Binding Model
• Gate-Tunable Quantum Dot in a High Quality Single Layer MoS${}_2$ Van der Waals Heterostructure
• Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
• Optical control of a single spin-valley in charged WSe${}_2$ quantum dots
• Electrotunable artificial molecules based on van der Waals heterostructures
• Valley qubit in gated MoS${}_2$ monolayer quantum dot
• A Tight Binding Approach to Strain and Curvature in Monolayer Transition-Metal Dichalcogenides
• Distinctive signatures of the spin- and momentum-forbidden dark exciton states in the photo-luminescences of strained WSe${}_2$ monolayers under thermalization
• Impurity-assisted electric control of spin-valley qubits in monolayer MoS${}_2$
• Tuning methods for semiconductor spin--qubits
• Electronic Excited States in Bilayer Graphene Double Quantum Dots
• Band nesting, massive Dirac Fermions and Valley Lande and Zeeman effects in transition metal dichalcogenides: a tight-binding model
• Strain-induced bound states in transition-metal dichalcogenide bubbles
• Spin-valley system in a gated MoS${}_2$-monolayer quantum dot
• Gate controlled quantum dots in monolayer WSe2
• Confined states in quantum dots defined within finite flakes of bilayer graphene: Coupling to the edge, ionization threshold, and valley degeneracy
• Magnetic field dependence of electronic properties of MoS${}_2$ quantum dots with different edges
• Spin-Degenerate Regimes for Single Quantum Dots in Transition Metal Dichalcogenide Monolayers
• Valley two-qubit system in a MoS${}_2$-monolayer gated double quantum dot
• The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
• Electrostatic quantum dots in silicene
• Valley and spin polarized broken symmetry states of interacting electrons in gated MoS${}_2$ quantum dots
• Spin and valley manipulation in single and double electrostatic silicene quantum dots