The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
arXiv:1907.09512 · doi:10.1103/PhysRevB.101.035401
Abstract
We present here results of atomistic theory of electrons confined by metallic gates in a single layer of transition metal dichalcogenides. The electronic states are described by the tight-binding model and computed using a computational box including up to million atoms with periodic boundary conditions and parabolic confining potential due to external gates embedded in it. With this methodology applied to MoS2, we find a twofold degenerate energy spectrum of electrons confined in the two non-equivalent K-valleys by the metallic gates as well as six-fold degenerate spectrum associated with Q-valleys. We compare the electron spectrum with the energy levels of electrons confined in GaAs/GaAlAs and in self-assembled quantum dots. We discuss the role of spin splitting and topological moments on the K and Q valley electronic states in quantum dots with sizes comparable to experiment.
References in corpus (55)
- The electronic properties of graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Van der Waals heterostructures
- Quantum Computation with Quantum Dots
- Control of valley polarization in monolayer MoS2 by optical helicity
- Valley polarization in MoS2 monolayers by optical pumping
- Spins in few-electron quantum dots
- MoS_2 as an ideal material for valleytronics: valley-selective circular dichroism and valley Hall effect
- The Valley Hall Effect in MoS2 Transistors
- Single-shot read-out of an individual electron spin in a quantum dot
- Optical Generation of Excitonic Valley Coherence in Monolayer WSe2
- Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2
- A CMOS silicon spin qubit
- Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
- Large spin splitting in the conduction band of transition metal dichalcogenide monolayers
- Monolayer MoS2: trigonal warping, "Γ-valley", and spin-orbit coupling effects
- A Density Matrix-based Algorithm for Solving Eigenvalue Problems
- The Addition Spectrum of a Lateral Dot from Coulomb and Spin Blockade Spectroscopy
- Exciton band structure of monolayer MoS2
- Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides
- Biaxial strain tuning of the optical properties of single-layer transition metal dichalcogenides
- Quantum computing with spin cluster qubits
- Valley-spin polarized Landau levels in a monolayer semiconductor
- Valley Magnetoelectricity in Single-Layer MoS2
- Gate Defined Quantum Confinement in Suspended Bilayer Graphene
- Gate-based single-shot readout of spins in silicon
- Spin States in Graphene Quantum Dots
- Berry phase modification to the energy spectrum of excitons
- Spin and Valley States in Gate-defined Bilayer Graphene Quantum Dots
- Nonlinear valley and spin currents from Fermi pocket anisotropy in 2D crystals
- Voltage-tunable singlet-triplet transition in lateral quantum dots
- Spin- and valley-dependent magneto-optical properties of MoS2
- Stark effect spectroscopy of mono- and few-layer MoS
- Excited states in bilayer graphene quantum dots
- A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2
- Observation of the single-electron regime in a highly tunable silicon quantum dot
- Intervalley coupling by quantum dot confinement potentials in monolayer transition metal dichalcogenides
- Gate-Tunable Quantum Dot in a High Quality Single Layer MoS Van der Waals Heterostructure
- Coulomb blockade in an atomically thin quantum dot coupled to a tunable Fermi reservoir
- Spin-valley qubit in nanostructures of monolayer semiconductors: Optical control and hyperfine interaction
- Optical control of a single spin-valley in charged WSe quantum dots
- Electrotunable artificial molecules based on van der Waals heterostructures
- Valley qubit in gated MoS monolayer quantum dot
- Impurity-assisted electric control of spin-valley qubits in monolayer MoS
- Tuning methods for semiconductor spin--qubits
- Model Prediction of Self-Rotating Excitons in Two-Dimensional Transition-Metal Dichalcogenides
- Electronic Excited States in Bilayer Graphene Double Quantum Dots
- Band nesting, massive Dirac Fermions and Valley Lande and Zeeman effects in transition metal dichalcogenides: a tight-binding model
- Strain-induced bound states in transition-metal dichalcogenide bubbles
- Confined states in quantum dots defined within finite flakes of bilayer graphene: Coupling to the edge, ionization threshold, and valley degeneracy
- Magnetic field dependence of electronic properties of MoS quantum dots with different edges
- Spin-Degenerate Regimes for Single Quantum Dots in Transition Metal Dichalcogenide Monolayers
- Electrostatic quantum dots in silicene
- Spin and valley manipulation in single and double electrostatic silicene quantum dots
- Flavor Quantum Dots and Artificial Quark Model in Transition Metal Dichalcogenides
Cited by in corpus (9)
- Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
- Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- Gate controlled quantum dots in monolayer WSe2
- Spin-valley locking for in-gap quantum dots in a MoS2 transistor
- Valley two-qubit system in a MoS-monolayer gated double quantum dot
- Valley and spin polarized broken symmetry states of interacting electrons in gated MoS quantum dots
- Interacting holes in a gated WSe quantum channel: valley correlations and zigzag Wigner crystal
- Electrically tunable MoSe/WSe heterostructure-based quantum dot
- Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides