Electrostatic quantum dots in silicene
arXiv:1805.02930 · doi:10.1038/s41598-018-25534-1
Abstract
We study electrostatic quantum dot confinement for charge carriers in silicene. The confinement is formed by vertical electric field surrounding the quantum dot area. The resulting energy gap in the outside of the quantum dot traps the carriers within, and the difference of electrostatic potentials on the buckled silicene sublattices produces nonzero carrier masses outside the quantum dot. We study the electrostatic confinement defined inside a silicene flake with both the atomistic tight-binding approach as well as with the continuum approximation for a circularly symmetric electrostatic potential. We find localization of the states within the quantum dot and their decoupling from the edge that makes the spectrum of the localized states independent of the crystal termination. For an armchair edge of the flake removal of the intervalley scattering by the electrostatic confinement is found
References in corpus (33)
- The electronic properties of graphene
- Atomically thin MoS2: A new direct-gap semiconductor
- Quantum Spin Hall Effect in Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Chiral tunneling and the Klein paradox in graphene
- Spins in few-electron quantum dots
- Quantum Spin Hall Effect in Silicene
- Low-energy effective Hamiltonian involving spin-orbit coupling in Silicene and Two-Dimensional Germanium and Tin
- Evidence of silicene in honeycomb structures of silicon on Ag(111)
- Electrically Tunable Band Gap in Silicene
- Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
- Topological Insulator and Helical Zero Mode in Silicene under Inhomogeneous Electric Field
- Magnetic confinement of massless Dirac fermions in graphene
- Valley-Polarized Quantum Anomalous-Hall Effects in Silicene
- Quantum dots in graphene
- Topological Frustration in Graphene Nanoflakes: Magnetic Order and Spin Logic Devices
- Giant magnetoresistance and perfect spin filter in silicene, germanene, and stanene
- Electronic transport properties of graphene nanoribbons
- Quasi-bound states of quantum dots in single and bilayer graphene
- Getting through the nature of silicene: sp2-sp3 two-dimensional silicon nanosheet
- Energy levels of triangular and hexagonal graphene quantum dots: a comparative study between the tight-binding and the Dirac approach
- Electrostatic confinement of electrons in an integrable graphene quantum dot
- Electrostatic confinement of electrons in graphene nano-ribbons
- The Fock-Darwin States of Dirac Electrons in Graphene-based Artificial Atoms
- Electron-electron interaction and charging effects in graphene quantum dots
- Spin- and valley-dependent transport through arrays of ferromagnetic silicene junctions
- Coulomb Blockade in Graphene Nanodisks
- Designing substrates for silicene and germanene: First-principles calculations
- Dirac gap-induced graphene quantum dot in an electrostatic potential
- Electro-absorption of silicene and bilayer graphene quantum dots
- Band structure of silicene on the zirconium diboride (0001) thin film surface - convergence of experiment and calculations in the one-Si-atom Brillouin zone
- Edge States in Silicene Nanodisks
- Band inversion at critical magnetic fields in a silicene quantum dot
Cited by in corpus (8)
- Nanomaterials for Quantum Information Science and Engineering
- CMOS Position-Based Charge Qubits: Theoretical Analysis of Control and Entanglement
- Spin-valley system in a gated MoS-monolayer quantum dot
- The effect of valley, spin and band nesting on the electronic properties of gated quantum dots in a single layer of transition metal dichalcogenides (TMDCs)
- Spin and valley manipulation in single and double electrostatic silicene quantum dots
- Persistent currents in topological and trivial confinement in silicene
- Nagaoka spin-valley ordering in silicene quantum dots
- Spin-valley qubits in gated quantum dots in a single layer of transition metal dichalcogenides