Band inversion at critical magnetic fields in a silicene quantum dot
arXiv:1703.07581 · doi:10.1209/0295-5075/111/37006
Abstract
We have found out that the band inversion in a silicene quantum dot (QD), in perpendicular magnetic and electric fields, drastically depends on the strength of the magnetic field. We study the energy spectrum of the silicene QD where the electric field provides a tunable band gap . Boundary conditions introduce chirality, so that negative and positive angular momentum zero Landau level (ZLL) edge states show a quite different behavior regarding the band-inversion mechanism underlying the topological insulator transition. We show that, whereas some ZLLs suffer band inversion at for any , other ZLLs only suffer band inversion above critical values of the magnetic field at nonzero values of the gap.
4 pages, 5 figures
References in corpus (9)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Valley-Polarized Metals and Quantum Anomalous Hall Effect in Silicene
- Valley polarized quantum Hall effect and topological insulator phase transitions in silicene
- Analytic Model for the Energy Spectrum of a Graphene Quantum Dot in a Perpendicular Magnetic Field
- Inverse participation ratio and localization in topological insulator phase transitions
- Identifying topological-band insulator transitions in silicene and other 2D gapped Dirac materials by means of Rényi-Wehrl entropy
- Landau levels and magnetic oscillations in gapped Dirac materials with intrinsic Rashba interaction
- Entropic uncertainty relations and topological-band insulator transitions in 2D gapped Dirac materials
- Protected edge states in silicene antidots and dots in magnetic field